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mil-prf-19500/355k 3 july 2005 superseding mil-prf-19500/355j 8 july 2004 performance specification sheet semiconductor device, unitized dua l transistor, npn, silicon, types 2n2919, 2n2920, 2n2919l, 2n 2920l, 2n2919u, and 2n2920u, jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the depa rtment of defense. the requirements for acquiring the prod uct described herein shall consist of this specification s heet and mil-prf-19500. 1. scope 1.1 scope . this specification covers the performance requir ements for two electrically isolated, matched npn silicon transistors as one dual unit. four levels of prod uct assurance are provided for each device type as specified in mil-prf-19500. two levels of pr oduct assurance are provided for die. 1.2 physical dimensions . see figure 1 (similar to to-78), figur e 2 (surface mount), figure 3 (janhca and jankca die), figure 4 (janhcb and jankcb die). * 1.3 maximum ratings, unless otherwise specified, t c =+25 c . p t (1) t a = +25 c p t (2) t c = +25 c i c v cbo v ceo v ebo t j and t stg one section both sections one section both sections mw 300 mw 600 mw 750 w 1.25 ma dc 30 v dc 70 v dc 60 v dc 6 c -65 to +200 (1) for t a > +25 c, derate linearly 1.71 mw/ c, one section; 3.43 mw/ c, both sections. (2) for t c > +25 c, derate linearly 4.286 mw/ c, one section; 7.14 mw/ c, both sections. amsc n/a fsc 5961 inch-pound the documentation and process conversion measures necessary to comply with this document shall be completed by 3 october 2005. * comments, suggestions, or questions on this docum ent should be addressed to defense supply center, columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43218-3990, or emailed to semiconductor@dscc.dla.mil . since contact information can change, you may want to verify the currency of this address information using the assist online database at http://assist.daps.dla.mil .
mil-prf-19500/355k 2 1.4 primary electrical characteristics of each i ndividual section, unless otherwise specified, t c =+25 c . h fe1 |h fe | v ce(sat) v ce = 5 v dc i c = 10 a dc v ce = 5 v dc i c = 0.5 ma dc i c = 1 ma dc i b = 100 a dc 2n2919 2n2919l 2n2919u 2n2920 2n2920l 2n2920u f = 20 mhz min max 60 240 175 600 3.0 20 v dc 0.3 1.5 primary electrical matching characteristics of eac h individual section, unless otherwise specified, t c =+25 c . h h fe fe 21 22 ? ? v ce = 5 v dc i c = 100 a dc (1) |v be1 - v be2 | 1 v ce = 5 v dc i c = 10 a dc | ? (v be1 - v be2 ) ? ta | 1 v ce = 5 v dc i c = 100 a dc t a = +25 c and -55 c | ? (v be1 - v be2 ) ? ta | 2 v ce = 5 v dc i c = 100 a dc t a = +125 c and +25 c min max 0.9 1.0 mv dc 5 mv dc 0.8 mv dc 1.0 (1) the larger number will be placed in the denominator. 2. applicable documents * 2.1 general . the documents listed in this section are specified in se ctions 3, 4, or 5 of this specification. this section does not include documents cited in other sectio ns of this specification or recommended for additional information or as examples. while every effort has bee n made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents ci ted in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 government documents . * 2.2.1 specifications , standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent spec ified herein. unless otherwise specif ied, the issues of these documents are those cited in the solicitation or contract. department of defe nse specifications mil-prf-19500 - semiconductor devices, general specification for. department of defense standards mil-std-750 - test methods for semiconductor devices. * (copies of these document s are available online at http://assist.daps.dla.mil/quicksearch or http://assist.daps.dla.mil or from the standardization document or der desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. noth ing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil-prf-19500/355k 3 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. tab shown omitted. 4. lead numbers 4 and 8 are omitted on this variation. 5. beyond r maximum, tw shall be held to a minimum length of .21 inch (5.33 mm). 6. tl shall be measured from maximum cd. 7. details of outline in this zone are optional. 8. cd 1 shall not vary more than .010 inch (0.25 mm) in zo ne p. this zone is controlled for automatic handling. 9. leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true pos ition (tp) at a maximum material cond ition (mmc) relative to the tab at mmc. the device may be measured by direct met hods or by the gauge and gauging procedures described on gauge drawing gs-1. 10. lu applies between l 1 and l 2 . ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 11. for transistor types 2n2919 and 2n2920, ll is .500 inch (12.70 mm) minimum and .750 inch (19.05 mm) maximum. 12. for transistor type 2n2919l and 2n2920l, ll is 1.500 inches (38.10 mm) minimum and 1.750 inches (44.45 mm) maximum. 13. in accordance with asme y14.5m, diameters are equivalent to x symbology. figure 1. physical dimensions (2n2919, 2n2919l, 2n2920, and 2n2920l) . dimensions inches millimeters notes symbol min max min max cd .335 .370 8.51 9.40 cd 1 .305 .335 7.75 8.51 ch .140 .260 3.56 6.60 ht .009 .041 0.23 1.04 lc .140 .160 3.56 4.06 lc 1 .200 tp 5.08 tp 9 ld .016 .021 .041 0.53 10 ll see notes 10, 11, and 12 lu .016 .019 0.41 0.48 10 l 1 .050 1.27 10 l 2 .250 6.35 10 p .100 2.54 8 q .050 1.27 7 tl .029 .045 0.74 1.14 5, 6 tw .028 .034 0.71 0.86 4, 5 r .010 0.25 45 tp 45 tp 9
mil-prf-19500/355k 4 dimensions symbol inches millimeters min max min max bl .240 .250 6.10 6.35 bl 2 .250 6.35 bw .165 .175 4.19 4.44 bw 2 .175 4.44 ch .044 .080 1.12 2.03 pin no. transistor lh .014 .034 0.36 0.86 1 collector no. 1 ll 1 .060 .070 1.52 1.78 2 base no. 1 ll 2 .082 .098 2.08 2.49 3 base no. 2 ls 1 .095 .105 2.41 2.67 4 collector no. 2 ls 2 .045 .055 1.14 1.39 5 emitter no. 2 lw .022 .028 0.56 0.71 6 emitter no. 1 notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. figure 2. physical dimensions (2n2919u and 2n2920u) surface mount .
mil-prf-19500/355k 5 notes: 1. chip si ze................................................. .015 x .019 inch .001 inch (0.381 x 0.4826 mm 0.0254 mm). 2. chip thi ckness ........................................ .010 .0015 inch (0.254 0.0381 mm). 3. top metal ............................................... alumi num 15,000? minimum, 18,000? nominal. 4. back meta l.............................................. a. gold 2,500? minimum, 3,000? nominal. b. eutectic mount - no gold. 5. backsi de................................................. co llector. 6. bonding pad ........................................... b = . 003 inch (0.0762 mm), e = .004 inch (0.1016 mm) diameter. 7. passiva tion ............................................. si 3 n 4 (silicon nitride) 2 k? min, 2.2 k? nom. figure 3. physical dimensions (janhca and jankca die) .
mil-prf-19500/355k 6 e b notes: 1. die size--------- .018 x .018 inch (0.457 mm x 0.457 mm). 2. die thickness--- .008 .0016 inch (0.203 mm 0.04 mm). 3. base pad-------- .0025 inch diameter (0.06 mm). 4. emitter pad----- .003 inch diameter (0.076). 5. back metal----- gold, 6500 1950?. 6. top metal------ al uminum, 19500 2500?. 7. back side------ collector. 8. glassivation--- sio 2 , 7500 1500?. figure 4. physical dimensions (janhcb and jankcb) b version die .
mil-prf-19500/355k 7 3. requirements 3.1 general . the individual item requirements shall be as specified in mil-prf-19500 and as modified herein. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). * 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500 and as follows: h fe-1 /h fe-2 ............................................. static forward-curr ent-gain-ratio. the matching ratio of the static forward- current transfer rations of each section. * r ja ..................................................... therma l resistance junc tion to ambient. * r jsp(is) ................................................ therma l resistance junction to solder pads (infinite sink mount to pcb). |v be1 - v be2 | ........................................ absolute value of base-emitter-voltage di fferential between the individual sections. | ? v be1-2 (t1) - ? v be1-2 (t2)| ................ absolute value of the algebraic diffe rence between the base-emitter- voltage differentials between the indi vidual sections at two different temperatures. 3.4 interface and physical dimensions . the interface and physical dimensions shall be as specified in mil-prf-19500 and on figures 1, 2, 3, and 4. 3.4.1 lead finish . lead finish shall be solderable in accordance with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it shall be specified in the acqu isition document (see 6.2). 3.5 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specif ied in 1.3, 1.4, and 1.5. 3.6 electrical test requirements . the electrical test requirement s shall be as specified in table i. 3.7 marking . marking shall be in accordance with mil-prf-19500. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will a ffect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4 and tables i and ii). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and as specified herein. 4.2.1 janhc and jankc die . qualification shall be in accordance with mil-prf-19500.
mil-prf-19500/355k 8 * 4.2.2 group e qualification . group e inspection shall be performed for q ualification or re-qualification only. in case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table ii tests, the tests specified in table ii herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 screening (jans, jantxv, and jantx levels only) . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv measurement of mil-prf-19500) jans level jantx and jantxv levels 3c thermal impedance, method 3131 of mil-std-750 (see 4.3.2) thermal impedance, method 3131 of mil-std-750 (see 4.3.2) 7 optional optional 9 i cbo2 , h fe3 , h h fe fe 21 22 ? ? not applicable 10 48 hours minimum 48 hours minimum 11 i cbo2 , h fe3 , h h fe fe 21 22 ? ? ? i cbo2 = 100 percent of initial value or 1 na dc, whichever is greater. ? h fe3 = 20 percent. i cbo2 , h fe3 , h h fe fe 21 22 ? ? 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; ? i cbo2 = 100 percent of initial value or 1 na dc, whichever is greater; ? h fe3 = 25 percent. subgroup 2 and the base emitter voltage (nonsaturated) (absolute va lue of differential-change with temperature) tests of subgroup of table i herein; ? i cbo2 = 100 percent of initial value or 1 na dc, whichever is greater; ? h fe3 = 25 percent. 14 required required * 4.3.1 power burn-in conditions . power burn-in conditions are as follows: v cb = 10 to 30 v dc; apply maximum rated p t as defined in 1.3. with approval of the qualifying ac tivity and preparing activity, alternate burn-in criteria (hours, bias conditions, t j , and mounting conditions) may be used for jantx and jantxv quality levels. a justification demonstrating equivalence is required. in addition, t he manufacturing site?s burn-in data and performance history will be essential criteria for burn-in modification approval.
mil-prf-19500/355k 9 * 4.3.2 thermal impedance (z jx measurements) . the z jx measurements shall be performed in accordance with method 3131 of mil-std-750. a. i h forward heating current -----------50 ma (min). b. t h heating time --------------------------25 - 30 ms. c. i m measurement current---------------5 ma. d. t md measurement delay time --------60 s max. e. v ce collector-emitter voltage --------10 v dc minimum. the maximum limit for z jx under these test conditions are z jx (max) = 72 c/w. 4.3.3 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500, ?discrete semiconductor die/chip lot acc eptance?. burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being perform ed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. * 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4.4.2.1 herein. electrical measurements (end-points) and delta requirements shall be in accordance with t able i, subgroup 2 and 4.5.8 herein. see 4.4.2.2 for jan, jantx, and jantxv group b testing. electrical meas urements (end-points) and delt a requirements for jan, jantx, and jantxv shall be after each st ep in 4.4.2.2 and shall be in accordan ce with table i, subgroup 2 and 4.5.8 herein. * 4.4.2.1 group b inspection, t able via (jans) of mil-prf-19500 . subgroup method condition b4 1037 v cb = 10 v dc, 6,000 cycles, adjust device current, or power, to achieve a minimum ? t j of +100 c. b5 1027 v cb = 10 v dc, p d 100 percent of maximum rated p t (see 1.3). (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) option 1: 96 hours min, sample size in acco rdance with table via of mil-prf-19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours min., sample size = 45, c = 0; adjust t a to achieve t j = +225 c minimum.
mil-prf-19500/355k 10 * 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a lot failure, the resubmission requirements of mil-prf-19500 shall apply. in addition, all catastrophic failures during ci shall be analyzed to the extent possible to identify root cause and corrective action. whenever a failure is identified as wafer lot or wafer processing rela ted, the entire wafer lot and re lated devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. step method condition 1 1026 steady-state life: 1,000 hours minimum, v cb = 10 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. the sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 blocking life, t a = +150 c, v cb = 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 high-temperature life (non- operating), t = 340 hours, t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, janj, jantx, and jantxv samples shall be se lected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed table i, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, janj, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and in 4.4.3.1 (jans) and 4.4.3. 2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end-poi nts) and delta requirements shall be in accordance with table i, subgroup 2 and 4.5.8 herein. * 4.4.3.1 group c inspection, t able vii (jans) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, not applicable to surface mount. c5 3131 r ja and r jc only, as applicable (see 1.3) and in a ccordance with thermal impedance curves. c6 1026 1,000 hours at v cb = 10 v dc; power shall be applied to achieve t j = +150 c minimum and a minimum of p d = 75 percent of maximum rated p t as defined in 1.3 n = 22, c = 0. the sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours.
mil-prf-19500/355k 11 * 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e, not applicable to surface mount. c5 3131 r ja and r jc only, as applicable (see 1.3) and in a ccordance with thermal impedance curves. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and le ad finish procured to the same specification which is submitted to and passes table i tests herein for conformance in spection. when the final lead finish is solder or any plating prone to oxidation at high temper ature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with t he requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in table ix of mil-prf-19500 and as spec ified in table ii herein. electrical measurements (end- points) shall be in accordance with table i, subgroup 2 here in; delta measurements shall be in accordance with the applicable steps of 4.5.8. 4.5 methods of inspection . methods of inspection shall be as specifie d in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement s hall be as specified in section 4 of mil-std-750. 4.5.2 testing of units . all specified electrical tests, including en d-point tests, shall be performed equally on both sections of the transistor types covered herein, except wher e the electrical characterist ic being evaluated applies to the transistor as a device entity. 4.5.3 disposition of leads when testi ng characteristics of each section . during the measurement of the characteristics of each section, the leads of t he section not under test shall be open-circuited. 4.5.4 forward-current-gain ratio . the value for the forward-current-gain ratio for each individual section of a dual unit shall be measured using method 3076 of mil-std-750. the forward-current-gain ratio shall be calculated by dividing one of the values by the other. if possible, th is ratio shall be measured directly to improve accuracy. 4.5.5 base-emitter-voltage differential . the base-emitter-voltage differential shall be determined by connecting the emitters of the individual sections together, applying spec ified electrical test conditions to each individual section in accordance with method 3066 of mil-std-750, test cond ition b, and measuring the abs olute value of the voltage between the bases of the individual sections of a dual unit. 4.5.6 base-emitter-voltage differential change with temperature . the value of the base-emitter-voltage differential shall be measured at the two specified te mperatures in accordance with 4.5. 5 except that the polarities of the differentials and identities of the individual sections shall be maintained. the absolute value of the algebraic difference between the values at the two temperature extremes shall be calculated. a mathematical formula for this parameter is: |(v be1 (t 1 ) - v be2 (t 1 )) - (v be1 (t 2 ) - v be2 (t 2 )) |
mil-prf-19500/355k 12 4.5.7 noise figure test . noise figure shall be measured using a m odel no. 2173c/2181, quan tech laboratories test set, or equivalent. conditions shall be as specified in table i. 4.5.8 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol limit method conditions min max 1 collector-base cutoff current 3036 bias condition d, v cb = 45 v dc ? i cbo2 100-percent of initial value or 1 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 5 v dc; i c = 1 ma dc; pulsed, see 4.5.1 ? h fe3 25 percent change from initial reading.
mil-prf-19500/355k 13 * table i. group a inspection . inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 electrical measurements 4 / table i, subgroup 2 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / 6 / 1071 n = 22 devices, c = 0 fine leak gross leak bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hours or t a = +300 c at t = 2 hours n = 11 wires, c = 0 decap internal visual (design verification) 4 / 2075 n = 4 devices, c = 0 subgroup 2 collector to base cutoff current 3036 bias condition d, v cb = 70 v dc i cbo1 10 a dc emitter to base cutoff current 3061 bias condition d, v eb = 6 v dc i ebo1 10 a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 60 v dc collector to base cutoff current 3036 bias condition d; v cb = 45 v dc i cbo2 2 na dc collector to emitter cutoff current 3041 bias condition d; v ce = 5 v dc i ceo1 2 na dc emitter to base cutoff current 3061 bias condition d; v eb = 5 v dc i ebo2 2 na dc forward-current transfer ratio 3076 v ce = 5 v dc; i c = 10 a dc h fe1 2n2919, 2n2919l, 2n2919u 60 240 2n2920, 2n2920l, 2n2920u 175 600 forward-current transfer ratio 3076 v ce = 5 v dc; i c = 100 a dc h fe2 2n2919, 2n2919l, 2n2919u 100 325 2n2920, 2n2920l, 2n2920u 235 800 see footnotes at end of table.
mil-prf-19500/355k 14 * table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio 3076 v ce = 5 v dc; i c = 1 ma dc; h fe3 2n2919, 2n2919l, 2n2919u 150 600 2n2920, 2n2920l, 2n2020u 300 1,000 base-emitter saturation voltage 3066 test condition a; i c = 1.0 ma dc; i b = 100 a dc; v be(sat)1 0.5 1.0 v dc collector-emitter saturation voltage 3071 i c = 1.0 ma dc; i b = 100 a dc; v ce(sat)1 0.3 v dc forward-current transfer ratio (gain ratio) 6 / 3076 v ce = 5 v dc, i c = 100 a dc (see 4.5.4) h h fe fe 21 22 ? ? 0.9 1.0 absolute value of base-emitter-voltage differential 3066 test condition b; v ce = 5 v dc, i c = 10 a dc (see 4.5.5) |v be1 - v be2 | 1 5 mv dc absolute value of base-emitter-voltage differential 3066 test condition b; v ce = 5 v dc, i c = 100 a dc (see 4.5.5) |v be1 - v be2 | 2 3 mv dc absolute value of base-emitter-voltage differential 3066 test condition b; v ce = 5 v dc, i c = 1 ma dc (see 4.5.5) |v be1 - v be2 | 3 5 mv dc base-emitter-voltage (nonsaturated) (absolute value of differential change with temperature) 7 / 3066 test condition b; v ce = 5 v dc, i c = 100 a dc t a = +25 c and -55 c (see 4.5.6) | ? v be1 -v be2 ? t a | 1 0.8 mv dc base-emitter-voltage (nonsaturated) (absolute value of differential change with temperature) 7 / 3066 test condition b; v ce = 5 v dc, i c = 100 a dc t a = +125 c and +25 c (see 4.5.6) | ? v be1 -v be2 ? t a | 2 1 mv dc subgroup 3 high temperature operation t a = +150 c collector to base cutoff current 3036 bias condition d; v cb = 45 v dc i cbo3 2.5 a dc low temperature operation t a = -55 c forward-current transfer ratio 3076 v ce = 5 v dc; i c = 10 a dc h fe4 2n2919, 2n2919l, 2n2919u 20 2n2920, 2n2920l, 2n2920u 50 see footnotes at end of table.
mil-prf-19500/355k 15 * table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 4 small-signal short-circuit input impedance 3201 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h ie 3 30 k ? small-signal open-circuit reverse voltage transfer ratio 3211 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h re 1 x 10 -3 small-signal open-circuit output admittance 3216 v ce = 5 v dc; i c = 1 ma dc; f = 1 khz h oe 60 mhos small-signal short-circuit forward current transfer ratio (magnitude h fe ) 3306 v ce = 5 v dc; i c = 0.5 ma dc; f = 20 mhz | h fe | 3 20 open circuit output capacitance 3236 v cb = 5 v dc; i e = 0 100 khz f 1 mhz c obo 5 pf noise figure 3246 v ce = 5 v dc, i c = 10 a dc r g = 10 k ? , (see 4.5.7) test 1 f = 100 hz f1 5 db test 2 f = 1 khz f2 3 db test 3 f = 10 khz f3 3 db subgroup 5 collector to emitter cutoff current 3041 bias condition d; v ce = 40 v dc i ces 20 na dc subgroups 6 and 7 not required 1 / for sampling plan see mil-prf-19500. 2 / for resubmission of failed test in subgroup 1 of table i, double the sample size of the failed test or sequence of tests. a failure in table i, subgroup 1 shall not require re test of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices. 6 / the larger number shall be placed in the denominator. 7 / when using table i, subgroup 2 as electrical end-po ints, this test is only required for jans end-points.
mil-prf-19500/355k 16 * table ii. group e inspection (all quality leve ls) - for qualification or re-qualification only . mil-std-750 inspection method conditions qualification subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life 1051 1071 1037 test condition c, 500 cycles see table i, subgroup 2 and 4.5.8 herein. intermittent operation life: v cb = 10 v dc, 6,000 cycles, adjust device current, or powe r, to achieve a minimum ? t j of +100 c. 12 devices c = 0 45 devices c = 0 electrical measurements see table i, subgroup 2 and 4.5.8 herein. subgroup 4 thermal impedance curves each supplier sha ll submit their qualification lot average and design maximum thermal impedance curves to the qualifying activity. in addition, the optim al test conditions and thermal impedance limit shall be provided to the qualifying activity in the qualification report. sample size n/a subgroup 5 not applicable subgroup 6 electrostatic discharge (esd) 1020 testing is not required for class 3 listing. testing is required for a non-sensitive listing to prove capability. 3 devices c = 0 subgroup 8 45 devices c = 0 reverse stability 1033 condition b.
mil-prf-19500/355k 17 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirem ents shall be as specified in the contract or order (see 6.2). when packaging of materiel is to be performed by dod or in-house contractor personnel, these personnel need to contact the responsible packaging acti vity to ascertain packaging requirements. packaging requirements are maintained by the inventory control poin t's packaging activities within the military service or defense agency, or within the military service?s system commands. packaging data retrieval is available from the managing military department's or defense agency's autom ated packaging files, cd-rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanat ory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 ar e applicable to this specification. 6.2 acquisition requirements . acquisition documents should specify the following: a. title, number, and date of this specification. b. packaging requirements (see 5.1). c. lead finish (see 3.4.1). d. product assurance level and type designator. 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contrac t, qualified for inclusion in qualified manu facturers list (qml 19500) whether or not such products have actually been so listed by that dat e. the attention of the c ontractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they ma y be eligible to be awarded contracts or orders for the products covered by this specification. information pert aining to qualification of products may be obtained from defense supply center, columbus, attn: dscc/vqe, p.o. box 3990, columbus, oh 43218-3990 or e-mail vqe.chief@dla.mil . * 6.4 suppliers of janhc die . the qualified janhc suppliers with the applicable letter version (example janhca2n2919) will be identified on the qml. janhc and jankc ordering information pin manufacturer 43611 34156 2n2919 janhca2n2919 janhcb2n2919, janhcb2n2920 jankca2n2919 jankcb2n2919, jankcb2n2920 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuraci es in these notations. bidders and cont ractors are cautioned to evaluate the requirements of this document based on the entire content irrespecti ve of the marginal notations and relationship to the last previous issue.
mil-prf-19500/355k 18 custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-3011) nasa - na dla - cc review activities: army - ar, mi, sm navy - as, mc air force - 19, 99 * note: the activities listed above were interested in this document as of the date of this document. since organizations and responsibilities can change, you should verify the currency of the information above using the assist online database at http://assist.daps.dla.mil .

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